NPFC - MIL-S-19500/292
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPE 2N2606
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| Organization: | NPFC |
| Publication Date: | 21 May 1970 |
| Status: | inactive |
| Page Count: | 9 |
scope:
This specification covers the detail requirements for a P-channel, junction, silicon, field-effect transistor.
See figure 1 (TO-18).
Document History
October 12, 1995
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPE 2N2606
A description is not available for this item.
MIL-S-19500/292
May 21, 1970
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPE 2N2606
This specification covers the detail requirements for a P-channel, junction, silicon, field-effect transistor.
See figure 1 (TO-18).
March 14, 1966
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPE 2N2606
A description is not available for this item.
December 10, 1964
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPE 2N2606
A description is not available for this item.
August 14, 1964
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPE 2N2606
A description is not available for this item.