IEC - 63275-2
Semiconductor devices – Reliability test method for silicon carbide discrete metal‑oxide semiconductor field effect transistors – Part 2: Test method for bipolar degradation due to body diode operation
active, Most Current
| Organization: | IEC |
| Publication Date: | 1 May 2022 |
| Status: | active |
| Page Count: | 24 |
| ICS Code (Transistors): | 31.080.30 |
scope:
This part of IEC 63275 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.
Document History
63275-2
May 1, 2022
Semiconductor devices – Reliability test method for silicon carbide discrete metal‑oxide semiconductor field effect transistors – Part 2: Test method for bipolar degradation due to body diode operation
This part of IEC 63275 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide...