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IEC - 60747-8

Semiconductor devices – Discrete devices – Part 8: Field-effect transistors

active, Most Current
Organization: IEC
Publication Date: 1 June 2021
Status: active
Page Count: 160
ICS Code (Transistors): 31.080.30
scope:

This part of IEC 60747 gives standards for the following categories of field-effect transistors:

- type A: junction-gate type;

- type B: insulated-gate depletion (normally on) type;

- type C: insulated-gate enhancement (normally off) type.

Since a field-effect transistor may have one or several gates, the classification shown below results:

NOTE 1 Schottky barrier-gate and insulated gate devices include depletion type devices and enhancement type devices.

NOTE 2 MOSFETs for some applications may not have inverse diode characteristics in the data sheet. Special circuit element structures to eliminate body diode are under development for such applications. MOSFET applications such as motor control equipment need to specify the inverse diode characteristics in the MOSFET to use the inverse diode as a free wheeling diode.

NOTE 3 The graphical symbol only for type C is used in this standard. The standard equally applies for P-channel and for type A and B devices.

Document History

60747-8
June 1, 2021
Semiconductor devices – Discrete devices – Part 8: Field-effect transistors
This part of IEC 60747 gives standards for the following categories of field-effect transistors: – type A: junction-gate type; – type B: insulated-gate depletion (normally on) type; – type C:...
60747-8 AMD 1
June 1, 2021
AMENDMENT 1 Semiconductor devices – Discrete devices – Part 8: Field-effect transistors
A description is not available for this item.
IEC 60747-8
December 1, 2010
Semiconductor devices – Discrete devices – Part 8: Field-effect transistors
This part of IEC 60747 gives standards for the following categories of field-effect transistors: – type A: junction-gate type; – type B: insulated-gate depletion (normally on) type; – type C:...
IEC 60747-8
December 1, 2000
Semiconductor Devices - Part 8: Field-Effect Transistors
A description is not available for this item.
60747-8
January 1, 1984
Semiconductor Devices Discrete Devices Part 8: Field-Effect Transistors
A description is not available for this item.

References

This document references:
IEC 60747-1 - Semiconductor devices – Part 1: General
Published by IEC on August 1, 2010
This part of IEC 60747 gives the general requirements applicable to the discrete semiconductor devices and integrated circuits covered by the other parts of IEC 60747 and IEC 60748 (see Annex A).
This document references:
IEC 60747-2 - Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
Published by IEC on April 1, 2016
This part of IEC 60747 provides standards for the following categories or sub-categories of rectifier diodes, including: • line rectifier diodes; • avalanche rectifier diodes; • fast-switching...
This document references:
IEC 60747-7 - Semiconductor devices – Discrete devices – Part 7: Bipolar transistors
Published by IEC on September 1, 2019
This part of IEC 60747-7 gives the requirements applicable to the following sub-categories of bipolar transistors excluding microwave transistors. – Small signal transistors (excluding switching and...
This document references:
IEC 60749-23 - Semiconductor devices – Mechanical and climatic test methods – Part 23: High temperature operating life
Published by IEC on March 1, 2011
This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily...
This document references:
IEC 60749-34 - Semiconductor devices – Mechanical and climatic test methods – Part 34: Power cycling
Published by IEC on October 1, 2010
Scope and object This part of IEC 60749 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of...
This document is referenced by:
BS EN 60747-15 - Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
Published by BSI on April 30, 2012
A description is not available for this item.
This document is referenced by:
BS EN 61360-4 - Standard data element types with associated classification scheme for electric components Part 4: IEC reference collection of standard data element types and component classes
Published by BSI on December 2, 2005
A description is not available for this item.
This document is referenced by:
BS EN IEC 60027-2 - TC - Tracked Changes (Redline) - Letter symbols to be used in electrical technology Part 2: Telecommunications and electronics
Published by BSI on February 24, 2020
A description is not available for this item.
This document is referenced by:
BS EN 61360-1 - TC - Tracked Changes (Redline) - Standard data element types with associated classification scheme Part 1: Definitions — Principles and methods
Published by BSI on February 26, 2020
A description is not available for this item.
This document is referenced by:
63275-1 - Semiconductor devices – Reliability test method for silicon carbide discrete metal‑oxide semiconductor field effect transistors – Part 1: Test method for bias temperature instability
Published by IEC on April 1, 2022
This part of IEC 63275 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature...
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