IEC - 63275-1
Semiconductor devices – Reliability test method for silicon carbide discrete metal‑oxide semiconductor field effect transistors – Part 1: Test method for bias temperature instability
active, Most Current
| Organization: | IEC |
| Publication Date: | 1 April 2022 |
| Status: | active |
| Page Count: | 30 |
| ICS Code (Transistors): | 31.080.30 |
scope:
This part of IEC 63275 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semicond
Document History
63275-1
April 1, 2022
Semiconductor devices – Reliability test method for silicon carbide discrete metal‑oxide semiconductor field effect transistors – Part 1: Test method for bias temperature instability
This part of IEC 63275 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature...