DLA - MIL-PRF-19500/420N (2)
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), AND UN-ENCAPSULATED, TYPES 1N5550 THROUGH 1N5554, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
active, Most Current
| Organization: | DLA |
| Publication Date: | 26 May 2022 |
| Status: | active |
| Page Count: | 29 |
scope:
Scope.
This specification covers the performance requirements for silicon, general purpose, power rectifier semiconductor diodes. The diode is non cavity double plug construction, with high temperature metallurgical bonds (category 1) between both sides of the silicon die and terminal pins. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device. Two levels of product assurance (JANHC and JANKC) are provided for each un-encapsulated device type.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/420N (2)
May 26, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), AND UN-ENCAPSULATED, TYPES 1N5550 THROUGH 1N5554, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
Scope.
This specification covers the performance requirements for silicon, general purpose, power rectifier semiconductor diodes. The diode is non cavity double plug construction, with high...
October 25, 2021
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), AND UN-ENCAPSULATED, TYPES 1N5550 THROUGH 1N5554, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
Scope.
This specification covers the performance requirements for silicon, general purpose, power rectifier semiconductor diodes. The diode is non cavity double plug construction, with high...
September 23, 2016
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), TYPES 1N5550 THROUGH 1N5554, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. The diode is non cavity double plug construction, with high temperature metallurgical bonds...
September 6, 2013
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US, JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD, JANHCE, JANKCA, JANKCD, AND JANKCE
This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. The diode is non cavity double plug construction, with high temperature metallurgical bonds...
February 10, 2010
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US, JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD, JANHCE, JANKCA, JANKCD, AND JANKCE
This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. The diode is non cavity double plug construction, with high temperature metallurgical bonds...
June 27, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US, JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD, JANHCE, JANKCA, JANKCD, AND JANKCE
This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. The diode is non cavity double plug construction, with high temperature metallurgical bonds...
May 21, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US, JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD, JANHCE, JANKCA, JANKCD, AND JANKCE
This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. The diode is non cavity double plug construction, with high temperature metallurgical bonds...
August 8, 2006
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US, JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD, JANHCE, JANKCA, JANKCD, AND JANKCE
This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. Four levels of product assurance are provided for each encapsulated device type as specified...
April 19, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US, JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD, JANHCE, JANKCA, JANKCD, AND JANKCE
This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. Four levels of product assurance are provided for each encapsulated device type as specified...
December 30, 2002
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. Five levels of product assurance are provided for each encapsulated device type as specified...
October 9, 2001
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, GENERAL PURPOSE TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. Five levels of product assurance are provided for each encapsulated device type as specified...
October 24, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, GENERAL PURPOSE TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC
A description is not available for this item.
April 15, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, GENERAL PURPOSE TYPES 1 N5550 THROUGH 1 N5554, 1 N5550US THROUGH 1 N5554US JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC
A description is not available for this item.
August 26, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, GENERAL PURPOSE TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. Five levels of product assurance are provided for each device type as specified in...
July 22, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, GENERAL PURPOSE TYPES IN5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for silicon, general purpose, semiconductor diodes. Four levels of product assurance are provided for each device type as specified in MIL-S-19500....
June 15, 1992
SEMICONDUCTOR DEVICE, DIODE, SILICON, PONER, RECTIFIER, GENERAL PURPOSE TYPES IN5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US JANTX, JANTXV, AND JANS
This specification covers the detail requirements for silicon, general purpose, semiconductor diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500....
November 28, 1989
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, GENERAL PURPOSE TYPES 1N5550 THROUGH lN5554 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
September 28, 1984
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, GENERAL PURPOSE TYPES 1N5550 THROUGH 1N5554 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
June 8, 1973
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENERAL PURPOSE TX AND NON-TX TYPES 1N5550 THROUGH 1N5554
A description is not available for this item.
March 6, 1972
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENERAL PURPOSE TX AND NON-TX TYPES 1N5550 THROUGH 1N5554
A description is not available for this item.
August 30, 1971
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENERAL PURPOSE TX AND NON-TX TYPES 1N5550 THROUGH 1N5554
A description is not available for this item.
December 16, 1970
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENERAL PURPOSE TX AND NON-TX TYPES 1N5550 THROUGH IN5554
A description is not available for this item.
November 28, 1969
SEMICONDUCTOR DEVICE, DIODE, SILICON JAN 1N5550 THROUGH JAN IN5554 AND JAN TX1N5550 THROUGH JAN TX1N5554
A description is not available for this item.
September 8, 1969
SEMICONDUCTOR DEVICE, DIODE, SILICON, JAN 1N5550 THROUGH JAN IN5554 AND JAN TX1N5550 THROUGH JAN TX1N5554
A description is not available for this item.
May 4, 1969
SEMICONDUCTOR DEVICE, DIODE, SILICON, JAN 1N5550 THROUGH JAN IN5554 AND JAN TX1N5550 THROUGH JAN TX1N5554
A description is not available for this item.