DLA - MIL-PRF-19500/705E (2)
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON DEVICE TYPES 2N7488T3, 2N7489T3, 2N7490T3, AND 2N7556T3 JANTXVR AND JANSR
active, Most Current
| Organization: | DLA |
| Publication Date: | 3 November 2022 |
| Status: | active |
| Page Count: | 24 |
scope:
Scope.
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor Two levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/705E (2)
November 3, 2022
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON DEVICE TYPES 2N7488T3, 2N7489T3, 2N7490T3, AND 2N7556T3 JANTXVR AND JANSR
Scope.
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor Two levels of...
July 17, 2019
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON DEVICE TYPES 2N7488T3, 2N7489T3, 2N7490T3, AND 2N7556T3 JANTXVR AND JANSR
Scope.
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor Two levels of...
November 24, 2014
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON DEVICE TYPES 2N7488T3, 2N7489T3, 2N7490T3, AND 2N7556T3 JANTXVR AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor Two levels of product...
May 14, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device...
June 24, 2011
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
January 21, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
September 9, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
December 23, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...
February 6, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3 AND 2N7490T3 JANTXVR AND JANSR
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE)), power transistor. Two levels of...