DLA - MIL-PRF-19500/756A (2)
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, THROUGH HOLE AND SURFACE MOUNT, TYPES 2N7606 AND 2N7607 QUALITY LEVELS JANTXV AND JANS
active, Most Current
| Organization: | DLA |
| Publication Date: | 17 November 2022 |
| Status: | active |
| Page Count: | 18 |
scope:
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET, transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
MIL-PRF-19500/756A (2)
November 17, 2022
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, THROUGH HOLE AND SURFACE MOUNT, TYPES 2N7606 AND 2N7607 QUALITY LEVELS JANTXV AND JANS
Scope.
This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...
August 10, 2017
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, THROUGH HOLE AND SURFACE MOUNT, TYPES 2N7606 AND 2N7607 QUALITY LEVELS JANTXV AND JANS
This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...
December 12, 2014
TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, THROUGH HOLE AND SURFACE MOUNT, TYPES 2N7606 AND 2N7607 QUALITY LEVELS JANTXV AND JANS
This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...
April 28, 2010
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7607T3 AND 2N7606U3 JANTXVR, JANTXVF, JANSR, AND JANSF
This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET,...