DLA - MIL-S-19500/614
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV M, D, R, F, G, AND H, JANS M, D, R, F, G, AND H
inactive
| Organization: | DLA |
| Publication Date: | 10 January 1994 |
| Status: | inactive |
| Page Count: | 16 |
scope:
This specification covers the detail requirements for a N-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-S-19500, with avalanche energy ratings (EAS) and maximum avalanche current (IAS).
See figure 1 (TO-257AA).
Unless otherwise specified, TC = +25°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Electronics Supply Center, ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5270, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Unless otherwise specified, TC = +25°C.
Document History
September 8, 2021
TRANSISTOR, FIELD EFFECT RADIATION HARDENED ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES) N-CHANNEL, SILICON, TYPES 2N7380, AND 2N7381, JANTXV AND JANS
Scope.
This specification covers the performance requirements for an N-channel, radiation hardened (total dose and single event effects (SEE)), enhancement mode, MOSFET, power transistors intended...
August 30, 2018
TRANSISTOR, FIELD EFFECT RADIATION HARDENED * ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES) N-CHANNEL, SILICON, TYPES 2N7380, AND 2N7381, JANTXV AND JANS
This specification covers the performance requirements for an N-channel, radiation hardened (total dose and single event effects (SEE)), enhancement mode, MOSFET, power transistors intended for use...
July 2, 2015
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7380, AND 2N7381, JANTXV AND JANS
This specification covers the performance requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistors intended for use in high density power switching applications....
April 18, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV, M, D, R, F, G, AND H AND JANS, M, D, R, F, G, AND H
This specification covers the performance requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistors intended for use in high density power switching applications....
May 13, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV, M, D, R, F, G, AND H AND JANS, M, D, R, F, G, AND H
This specification covers the performance requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistors intended for use in high density power switching applications....
March 19, 2012
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV, M, D, R, F, G, AND H AND JANS, M, D, R, F, G, AND H
This specification covers the performance requirements for an N-channel, radiation hardened, (total dose and single event effects (SEE)) enhancement mode, MOSFET, power transistors intended for use...
November 19, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV M, D, R, F, G, AND H, JANS M, D, R, F, G, AND H
This specification covers the performance requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications....
November 29, 2006
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV M, D, R, F, G, AND H, JANS M, D, R, F, G, AND H
This specification covers the performance requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications....
December 20, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV M, D, R, F, G, AND H, JANS M, D, R, F, G, AND H
This specification covers the performance requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications....
September 8, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV M, D, R, F, G, AND H, JANS M, D, R, F, G, AND H
This specification covers the detail requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two...
February 22, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV M, D, R, F, G, AND H, JANS M, D, R, F, G, AND H
A description is not available for this item.
May 3, 1996
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV M, D, R, F, G, AND H, JANS M, D, R, F, G, AND H
This specification covers the detail requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two...
MIL-S-19500/614
January 10, 1994
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV M, D, R, F, G, AND H, JANS M, D, R, F, G, AND H
This specification covers the detail requirements for a N-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two...