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DLA - SMD-5962-90861

MICROCIRCUIT, LINEAR, J-FET LOW POWER, SINGLE/DUAL/QUAD OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 16 May 1994
Status: inactive
Page Count: 12
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 TL031 J-FET low power operational amplifier 02 TL032 J-FET low power dual operational amplifier 03 TL034 J-FET low power quad operational amplifier

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage (+VCC) . . . . . . . . . . . . . . . . . +18 V dc 2/ Supply voltage (−VCC) . . . . . . . . . . . . . . . . . −18 V dc 2/ Differential input voltage . . . . . . . . . . . . . . ±30 V dc 3/ Input voltage range (any input) (VIN) . . . . . . . . ±15 V dc 2/ 4/ Input current (IIN) . . . . . . . . . . . . . . . . . . ±1 mA Output current (IOUT) . . . . . . . . . . . . . . . . . ±40 mA Total current into +VCC terminal . . . . . . . . . . . 160 mA Total current into −VCC terminal . . . . . . . . . . . 160 mA Duration of short circuit current at (or below) 25°C . Unlimited 5/ Case temperature for 60 seconds: Case 2 . . . . . . . . . . . . . . . . . . . . . . . +260°C Lead temperature, 6 mm (1/16 inch) from case for 60 seconds: Cases C or P . . . . . . . . . . . . . . . . . . . . +300°C Maximum allowable power dissipation: Case C . . . . . . . . . . . . . . . . . . . . . . . 275 mW at +125°C Case P . . . . . . . . . . . . . . . . . . . . . . . 210 mW at +125°C Case 2 . . . . . . . . . . . . . . . . . . . . . . . 275 mW at +125°C Thermal resistance, junction-to-case (θJC) . . . . . . See MIL-STD-1835

Supply voltage (VCC) . . . . . . . . . . . . . . . . . ±15 V dc maximum Supply voltage (VCC) . . . . . . . . . . . . . . . . . ±5 V dc minimum Common-mode input voltage (VIC), (±VCC = ±5 V). . . . . 4 V dc maximum, −1.5 V dc minimum Common-mode input voltage (VIC), (±VCC = ±15 V) . . . . 14 V dc maximum, −11.5 V dc minimum Ambient operating temperature (TA) . . . . . . . . . . −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

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Document History

June 14, 2010
MICROCIRCUIT, LINEAR, J-FET LOW POWER, SINGLE/DUAL/QUAD OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
October 17, 1996
MICROCIRCUIT, LINEAR, J-FET LOW POWER, SINGLE/DUAL/QUAD OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-90861
May 16, 1994
MICROCIRCUIT, LINEAR, J-FET LOW POWER, SINGLE/DUAL/QUAD OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...

References

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