DLA - DSCC-VID-V62/04652 REV B
MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, QUADRUPLE 2-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 10 April 2012 |
| Status: | inactive |
| Page Count: | 10 |
scope:
This drawing documents the general requirements of a high performance quadruple 2-input positive NAND gate microcircuit, with an operating temperature range of -40°C to +125°C for device type 01, and an operating temperature range of -55°C to +125°C for device type 02.
Document History
October 20, 2020
MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, QUADRUPLE 2-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
Scope.
This drawing documents the general requirements of a high performance quadruple 2-input positive NAND gate microcircuit, with an operating temperature range of -40°C to +125°C for device type...
DSCC-VID-V62/04652 REV B
April 10, 2012
MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, QUADRUPLE 2-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance quadruple 2-input positive NAND gate microcircuit, with an operating temperature range of -40°C to +125°C for device type 01, and...
April 9, 2007
MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, QUADRUPLE 2-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
This drawing documents the general requirements of a high performance quadruple 2-input positive NAND gate microcircuit, with an operating temperature range of -40°C to +125°C for device type 01, and...
March 8, 2004
MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, QUADRUPLE 2-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
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