NPFC - MIL-M-38510/101
MICROCIRCUITS, LINEAR, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
| Organization: | NPFC |
| Publication Date: | 8 May 1987 |
| Status: | inactive |
| Page Count: | 37 |
scope:
This specification covers the detail requirements for monolithic silicon, operational amplifiers. Two product assurance classes and a choice of case outlines and lead finish are provided for each type and are reflected in the complete part number.
The complete part number shall be in accordance with MIL-M-38510.
The device types shall be as shown in the following:
Device type Circuit 01 Single operational amplifier - internally compensated 02 Dual operational amplifier - internally compensated 03 Single operational amplifier - externally compensated 04 Single operational amplifier - externally compensated 05 Dual operational amplifier - externally compensated 1/ 06 Dual operational amplifier - externally compensated 1/ 07 Single operational amplifier, high speed 08 Dual operational amplifier - internally compensated
The device class shall be the product assurance level as defined in MIL-M-38510.
The case outlines shall be designated as follows:
Outline letter Case outline (see MIL-M-38510, appendix C) A F-1 (14-lead, ¼" × ¼") flat pack B F-3 (14-lead, ¼" × ⅛") flat pack C D-1 (14-lead, ¼" × ¾") dual-in-line D F-2 (14-lead, ¼" × ⅜") flat pack E D-2 (16-lead, ¼" × ⅞") dual-in-line F F-5 (16-lead, ¼" × ⅜") flat pack G A-1 (8-lead), can H F-4 (10-lead, ¼" × ¼"), flat pack I A-2 (10-lead), can P D-4 (8-lead, ¼" × ⅜"), dual-in-line 2 C-2 (20-terminal, .350" × .350"), square chip carrier package
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Supply voltage range - - - - - - - - - - - - ±22 V dc 2/ Input voltage range - - - - - - - - - - - - - ±20 V dc 3/ Differential input voltage range- - - - - - - ±30 V dc 4/ Input current range - - - - - - - - - - - - - −0.1 mA to +10 mA Storage temperature range - - - - - - - - - - −65°C to +150°C Output short-circuit duration - - - - - - - - Unlimited 5/ Lead temperature (soldering, 60 seconds) - - +300°C Junction temperature (TJ) - - - - - - - - - - +175°C 6/
Supply voltage (VCC)- - - - - - - - - - - - ±5 V dc to 20 V dc Ambient temperature range - - - - - - - - - −55°C to +125°C
Maximum allowable Maximum Maximum Package Case outline power dissipation θJC θJA 14-lead FP A, B, D 350 mW at TA = +125°C 60°C/W 140°C/W Dual-in-line C, E, P 400 mW at TA = +125°C 35°C/W 120°C/W 8-lead can G 330 mW at TA = +125°C 40°C/W 150°C/W 10-lead can I 350 mW at TA = +125°C 40°C/W 140°C/W 10-lead FP H 330 mW at TA = +125°C 60°C/W 150°C/W 16-lead FP F 400 mW at TA = +125°C 35°C/W 120°C/W 20-terminal 2 7/ at TA = +125°C 60°C/W 120°C/W square chip carrier package
intended Use:
Microcircuits conforming to this specification are intended for Government microcircuit applications (original equipment) and logistic purposes.
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