UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

DLA - SMD-5962-86830 REV A

MICROCIRCUITS, DIGITAL, NMOS 8K X 8 EEPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 10 January 1989
Status: inactive
Page Count: 35
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1. of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

0utline letter Case outline X D-10 (28-lead 1.490" × 610" × 232"), dual-in-line package Y C-12 (32-terminal,.560" × .458" × .120"), rectangular chip carrier Z F-12 (28-lead, .740" × .420" × .130"), flat package

Supply voltage range (VCC) - - - - - - - - - - - - −0.3 V dc to +6.0 V dc Storage temperature range- - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - +300°C Junction temperature (TJ) 2/ - - - - - - - - - - - +175°C Thermal resistance, Junction-to-case (θJC) - - - - See MIL-M-38510, appendix C Input voltage range - - - - - - - - - - - - - - - −0.3 V dc to +6.25 V dc 3/ Data retention - - - - - - - - - - - - - - - - - - 10 years (minimum) Endurance- - - - - - - - - - - - - - - - - - - - - 10,000 cycles/byte (minimum) all devices

Supply voltage (VCC) - - - - - - - - - - - - - - - +4 05 V dc to +5.5 V dc Case operating temperature range (TC)- - - - - - - −55°C to +125°C Input voltage, low (VIL) - - - - - - - - - - - - - −0.1 V dc to +0.8 V dc Input voltage, high (VIH)- - - - - - - - - - - - - +2.0 V dc to VCC +0.3 V dc

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

July 14, 2017
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 8K X 8 EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
March 19, 2010
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 8K X 8 EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-86830 REV A
January 10, 1989
MICROCIRCUITS, DIGITAL, NMOS 8K X 8 EEPROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1. of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
April 30, 1987
MICROCIRCUITS, DIGITAL, NMOS 8K X 8 EEPROM, MONOLITHIC SILICON
A description is not available for this item.

References

Advertisement