DOD - SMD 5962-86830
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 8K X 8 EEPROM, MONOLITHIC SILICON
inactive
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| Organization: | DOD |
| Publication Date: | 19 March 2010 |
| Status: | inactive |
| Page Count: | 33 |
scope:
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
July 14, 2017
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 8K X 8 EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD 5962-86830
March 19, 2010
MICROCIRCUIT, MEMORY, DIGITAL, NMOS, 8K X 8 EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 10, 1989
MICROCIRCUITS, DIGITAL, NMOS 8K X 8 EEPROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1. of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
April 30, 1987
MICROCIRCUITS, DIGITAL, NMOS 8K X 8 EEPROM, MONOLITHIC SILICON
A description is not available for this item.