NPFC - MIL-S-19500/603
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7268, 2N7269, AND 2N7270 JANTXVM, D, R, H AND JANSM, D, R, H
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| Organization: | NPFC |
| Publication Date: | 5 May 1992 |
| Status: | inactive |
| Page Count: | 24 |
scope:
This specification covers the detail requirements for an N-Channel, enhancement-mode, MOSFET, Radiation Hardened (total dose only), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-S-19500, with Avalanche Energy Maximum rating (EAS) and Maximum Avalanche Current (IAS).
See figure 1, TO-254AA.
TA = +25°C, unless otherwise specified. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA/Parts Project Office (NPPD), NASA Goddard Space Flight Center Code 310.A, Greenbelt, MD 20771 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Primary electrical characteristics at TC = +25°C.
Document History
June 27, 2019
TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY), N-CHANNEL, SILICON, (THROUGH-HOLE, SURFACE MOUNT, AND CARRIER BOARD PACKAGES), TYPES 2N7268, 2N7269, 2N7270, 2N7394, JANTXVR, F, G, H; JANSR, F, G, AND H
Scope.
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power. Two levels of product assurance (JANTXV and...
August 28, 2018
TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY), N-CHANNEL, SILICON, (THROUGH-HOLE, SURFACE MOUNT, AND CARRIER BOARD PACKAGES), TYPES 2N7268, 2N7269, 2N7270, 2N7394, JANTXVR, F, G, H; JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power. Two levels of product assurance (JANTXV and JANS) are...
September 9, 2016
TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY), N-CHANNEL, SILICON, (THROUGH-HOLE, SURFACE MOUNT, AND CARRIER BOARD PACKAGES), TYPES 2N7268, 2N7269, 2N7270, 2N7394, JANTXVR, F, G, H; JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power. Two levels of product assurance (JANTXV and JANS) are...
December 17, 2015
TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY), N-CHANNEL, SILICON, (THROUGH-HOLE AND SURFACE MOUNT PACKAGES) TYPES 2N7268, 2N7269, 2N7270, 2N7394, JANTXVR, F, G, H; JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power. Two levels of product assurance (JANTXV and JANS) are...
May 6, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U, JANTXVR, F, G, H; JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power. Two levels of product assurance are provided for each...
July 1, 2011
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U, JANTXVR, F, G, H; JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power. Two levels of product assurance are provided for each...
April 10, 2006
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power. Two levels of product assurance are provided for each...
November 10, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power. Two levels of product assurance are provided for each...
May 29, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power. Two levels of product assurance are provided for each...
October 10, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power. Two levels of product assurance are provided for each...
November 15, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power. Two levels of product assurance are provided for each...
May 3, 1996
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U JANTXVM, D, R, F, G, AND H; AND JANSM, D, R, F, G, AND H
This specification covers the detail requirements for an N-Channel, enhancement-mode, MOSFET, Radiation Hardened (total dose only), power transistor intended for use in high density power switching...
January 21, 1994
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7268, 2N7269, AND 2N7270 JANTXVM, D, R, F, G, AND H; AND JANSM, D, R, F, G, AND H
This specification covers the detail requirements for an N-Channel, enhancement-mode, MOSFET, Radiation Hardened (total dose only), power transistor intended for use in high density power switching...
MIL-S-19500/603
May 5, 1992
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7268, 2N7269, AND 2N7270 JANTXVM, D, R, H AND JANSM, D, R, H
This specification covers the detail requirements for an N-Channel, enhancement-mode, MOSFET, Radiation Hardened (total dose only), power transistor intended for use in high density power switching...