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DLA - SMD-5962-88520

MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 3 December 1987
Status: inactive
Page Count: 14
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54AC74 Dual D-type positive edge-triggered flip-flop 02 54AC11074

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead ¼" × ⅜"), flat package 2 C-2 (20-terminal .350" × .350"), square chip carrier package

Supply voltage range 1/ - - - - - - - - - - - - - - - −0.5 V dc to +6.0V dc DC input voltage 1/ - - - - - - - - - - - - - - - - - −0.5 V dc to VCC+0.5 V dc DC output voltage 1/- - - - - - - - - - - - - - - - - −0.5 V dc to VCC+0.5 V dc Clamp diode current - - - - - - - - - - - - - - - - - ±20 mA DC output current (per pin) - - - - - - - - - - - - - ±50 mA DC VCC or GND current (per pin) - - - - - - - - - - - ±100 mA Storage temperature range - - - - - - - - - - - - - - −65° C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - 500 mW Lead temperature (soldering, 10 seconds) - - - - - - - +245°C Thermal resistance, junction-to-case (θJC): Cases C, D, and 2- - - - - - - - - - - - - - - - - - (See MIL-M-38510, appendix C) Junction temperature (TJ) 2/ - - - - - - - - - - - - - +175°C

Supply voltage (VCC) 3/ - - - - - - - - - - - 3.0 V dc to 5.5 V dc Input voltage - - - - - - - - - - - - - - - - 0.0 V dc to VCC Output voltage - - - - - - - - - - - - - - - 0.0 V dc to VCC Case operating temperature range (TC) - - - - −55°C to +125°C Input rise or fall time: VCC = 3.6 V to 5.5 V - - - - - - - - - - - 0 to 10 ns/V) Minimum setup time Dn to CPn (ts): TC = 25°C, VCC = 3.0 V - - - - - - - - - - 7.9 ns VCC = 4.5 V - - - - - - - - - - 4.5 ns TC = −55°C, +125°C, VCC = 3.0 V - - - - - - 10.7 ns VCC = 4.5 V - - - - - - 6.1 ns Minimum holdtime Dn to CPn (th): TC = 25°C, VCC = 3.0 V - - - - - - - - - - 0.5 ns VCC = 4.5 V - - -- - - -- - - - 0.5 ns TC = −55°C, +125°C, VCC = 3.0 V - - - - - - 0.5 ns VCC = 4.5 V - - - - - - 0.5 ns Pulse width CPn (tw): TC = 25°C, VCC = 3.0 V - - - - - - - - - - 7.4 ns VCC = 4.5 V - - - - - - - - - - 5.0 ns TC = −55°C, +125°C, VCC = 3.0 V - - - - - - 10 ns VCC = 4.5 V - - - - - - 5.7 ns Pulse width [C bar][D bar]n or [S bar][D bar]n (tw): TC = 25°C, VCC = 3.0 V - - - - - - - - - - 7.6 ns VCC = 4.5 V - - - - - - - - - - 5.0 ns TC = −55°C, +125°C, VCC = 3.0 V - - - - - - 10.2 ns VCC = 4.5 V - - - - - - 5.8 ns Maximum removal time [C bar][D bar]n or [S bar][D bar]n to [C bar][P bar]n (trem): TC = 25°C, VCC = 3.0 V - - - - - - - - - - 3.5 ns VCC = 4.5 V - - - - - - - - - - 2 ns TC = −55°C, +125°C, VCC = 3.0 V - - - - - 4.7 ns VCC = 4.5 V - - - - - - 2.7 ns Maximum operating frequency (fmax): TC = 25°C, VCC = 3.0 V - - - - - - - - - - 67 MHz VCC = 4.5 V - - - - - - - - - - 119 MHz TC = −55°C, +125°C, VCC = 3.0 V - - - - - - 50 MHz VCC = 4.5 V - - - - -- 88 MHz

Unless otherwise specified, the following specification and standard, of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein.

SPECIFICATION MILITARY MIL-M-38510 - Microcircuits, General Specification for. STANDARD MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics.

(Copies of the specification and standard required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity.)

In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence.

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

August 28, 2023
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL D-TYPE POSITIVE EDGE TRIGGERED FLIP-FLOP, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead...
April 13, 2018
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL D-TYPE POSITIVE EDGE TRIGGERED FLIP-FLOP, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 22, 2012
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL D-TYPE POSITIVE EDGE TRIGGERED FLIP-FLOP, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
March 8, 2007
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
July 15, 2005
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 10, 2001
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
July 31, 2000
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
January 25, 2000
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. Microcircuits covered by...
SMD-5962-88520
December 3, 1987
MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
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