NPFC - MIL-PRF-19500/605
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R
inactive
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| Organization: | NPFC |
| Publication Date: | 20 November 2013 |
| Status: | inactive |
| Page Count: | 22 |
scope:
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
October 31, 2022
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE ONLY) N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D, R AND H
A description is not available for this item.
August 12, 2016
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE ONLY) N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D, R AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power...
MIL-PRF-19500/605
November 20, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power...
April 16, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power...
September 4, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298 JANTXVM, D, R, H AND JANSM, D AND R
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power...
November 8, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298 JANTXVM, D, R, H AND JANSM, D AND R
A description is not available for this item.
December 17, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298 JANTXVM, D, R, H AND JANSM, D AND R
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power...
March 24, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298 JANTXVM, D, R, H AND JANSM, D AND R
A description is not available for this item.
November 10, 1992
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298 JANTXVM, D, R, H AND JANSM, D AND R
This specification covers the detail requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power switching...