NPFC - MIL-PRF-19500/605
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298 JANTXVM, D, R, H AND JANSM, D AND R
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| Organization: | NPFC |
| Publication Date: | 4 September 2003 |
| Status: | inactive |
| Page Count: | 26 |
scope:
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500.
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
October 31, 2022
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE ONLY) N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D, R AND H
A description is not available for this item.
August 12, 2016
TRANSISTOR, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE ONLY) N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D, R AND H
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power...
November 20, 2013
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power...
April 16, 2008
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power...
MIL-PRF-19500/605
September 4, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298 JANTXVM, D, R, H AND JANSM, D AND R
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power...
November 8, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298 JANTXVM, D, R, H AND JANSM, D AND R
A description is not available for this item.
December 17, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298 JANTXVM, D, R, H AND JANSM, D AND R
This specification covers the performance requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power...
March 24, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298 JANTXVM, D, R, H AND JANSM, D AND R
A description is not available for this item.
November 10, 1992
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298 JANTXVM, D, R, H AND JANSM, D AND R
This specification covers the detail requirements for an N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power switching...