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DLA - SMD-5962-89817 REV B

MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 32K X 8-BIT UVEPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 1 October 1993
Status: inactive
Page Count: 15
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Access time 01 32K × 8 UVEPROM 55 ns 02 32K × 8 UVEPROM 45 ns 03 32K × 8 UVEPROM 35 ns 04 32K × 8 UVEPROM 55 ns 05 32K × 8 UVEPROM 45 ns 06 32K × 8 UVEPROM 35 ns

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X GDIP4-T28 or CDIP3-T28 28 Dual-in-line 2/ Y GDFP2-F28 28 Flat pack 2/ Z CQCC1-N32 32 Rectangular leadless chip carrier 2/ U GDIP1-T28 or CDIP2-T28 28 Dual-in-line 2/

Supply voltage range - - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to outputs in high Z state - - - - - −0.5 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - - - - - - −3.0 V dc to +7.0 V dc DC program voltage - - - - - - - - - - - - - - - - - - 13.0 V dc Maximum power dissipation (PD) - - - - - - - - - - - - 1.0 W 3/ Lead temperature (soldering, 10 seconds maximum) - - - +260°C Thermal resistance, junction-to-case (OJC) - - - - - - See MIL-STD-1835 Junction temperature (TJ) - - - - - - - - - - - - - - - +175°C Storage temperature range - - - - - - - - - - - - - - - −65°C to +150°C Temperature under bias - - - - - - - - - - - - - - - - −55°C to +125°C Endurance - - - - - - - - - - - - - - - - - - - - - - - 10 cycles/byte minimum Data Retention - - - - - - - - - - - - - - - - - - - - 10 years/minimum

Supply voltage (VCC) - - - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Ground voltage (GND) - - - - - - - - - - - - - - - - 0.0 V DC Input high voltage (VIH) - - - - - - - - - - - - - - 2.0 V dc minimum Input low voltage (VIL) - - - - - - - - - - - - - - - 0.8 V dc maximum Case operating temperature range (TC) - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

March 22, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8-BIT UVEPROM MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
August 24, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8-BIT UVEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
February 15, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 32K X 8-BIT UVEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89817 REV B
October 1, 1993
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 32K X 8-BIT UVEPROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
February 19, 1993
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 32K X 8-BIT UVEPROM, MONOLITHIC SILICON
A description is not available for this item.
March 29, 1991
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 32K X 8-BIT UVEPROM, MONOLITHIC SILICON
A description is not available for this item.

References

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