NPFC - MIL-PRF-19500/655
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXVR AND F AND JANSR AND F
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| Organization: | NPFC |
| Publication Date: | 17 January 2014 |
| Status: | inactive |
| Page Count: | 25 |
scope:
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.
intended Use:
Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History
February 25, 2021
TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXV AND JANS
Scope.
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are...
September 18, 2015
TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXV AND JANS
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided...
MIL-PRF-19500/655
January 17, 2014
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXVR AND F AND JANSR AND F
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device...
February 14, 2012
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXVR AND F AND JANSR AND F
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of...
April 30, 2007
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXVR AND F AND JANSR AND F
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
October 31, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON TYPES 2N7424U, 2N7425U AND 2N7426U JANTXVR AND F AND JANSR AND F
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
September 26, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON TYPES 2N7424U, 2N7425U AND 2N7426U JANTXVR AND F AND JANSR AND F
A description is not available for this item.
April 5, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON TYPES 2N7424U, 2N7425U AND 2N7426U JANTXVR AND F AND JANSR AND F
A description is not available for this item.
January 9, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON TYPES 2N7424U, 2N7425U AND 2N7426U JANTXVR AND F AND JANSR AND F
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
April 21, 2000
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U JANTXVR AND F AND JANSR AND F
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...
November 14, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U JANTXVR AND F AND JANSR AND F
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance are provided...