DIN EN 62047-25
Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon-based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area (IEC 47F/183/CD:2014)
|Publication Date:||1 May 2014|
|ICS Code (Electromechanical components in general):||31.220.01|
|ICS Code (Semiconductor devices in general):||31.080.01|
This part of IEC 62047 specifies the on-line testing method to
measure the bonding strength of micro area which is fabricated by
micromachining technology used in silicon-based
This part of IEC 62047 is applicable to the on-line pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology.
Micro anchor, fixed on the substrate through the micro bonding area, provides mechanical support of the movable sensing/actuating functional components in MEMS devices. With the devices scaling, defects, contaminations and thermal mismatch stress on the bonding surface will lead to a dramatic degradation of the bonding quality. In addition, considering that the testing method of the bonding quality should be simple and convenient to be realized, this standard specifies the on-line testing method of pull-press and shearing strength based on a patterned technique. This standard does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and to prepare the test specimen specially.
This standard can reflect not only the bonding quality quantitatively, but also the strength of the whole micro structure. And since the testing structure in this standard can be implanted in devices fabrication as standard detection pattern, this standard can provide a bridge, by which the fabrication foundry can give some quantitative reference for the designer.