DOD - SMD 5962-99617
MICROCIRCUIT, LINEAR, RADIATION HARDENED, FULL BRIDGE N-CHANNEL FET DRIVER, MONOLITHIC SILICON
| Organization: | DOD |
| Publication Date: | 16 June 2014 |
| Status: | inactive |
| Page Count: | 26 |
scope:
This drawing documents three product assurance class levels consisting of high reliability (device class Q), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturer's Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
