DLA - SMD-5962-96649 REV B
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, 4-STAGE PARALLEL IN/PARALLEL OUT SHIFT REGISTER, MONOLITHIC SILICON
active, Most Current
| Organization: | DLA |
| Publication Date: | 8 August 1997 |
| Status: | active |
| Page Count: | 26 |
Document History
SMD-5962-96649 REV B
August 8, 1997
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, 4-STAGE PARALLEL IN/PARALLEL OUT SHIFT REGISTER, MONOLITHIC SILICON
A description is not available for this item.
February 28, 1997
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, 4-STAGE PARALLEL IN/PARALLEL OUT SHIFT REGISTER, MONOLITHIC SILICON
Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original...
December 11, 1995
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, 4-STAGE PARALLEL IN/PARALLEL OUT SHIFT REGISTER, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...