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DLA - SMD-5962-87722

MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, TRIPLE 3-INPUT OR GATE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 13 October 1987
Status: inactive
Page Count: 11
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with complaint non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54HC4075 Triple 3-input OR gate

The case outlines shall be as designated to appendix C of MIL-M-38510, and as follows:

Outline letter Case outline C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat package 2 C-2 (20-terminal, .350" × .350"), square chip carrier package

Supply voltage range - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc DC output voltage- - - - - - - - - - - - - - - - - - −0.5 V dc to VCC +0.5 V dc Clamp diode current- - - - - - - - - - - - - - - - - ±20 mA DC output current (per pin) - - - - - - -- - - - - - ±25 mA DC VCC or GND current (per pin) - - - - - - - - - - ±50 mA Storage temperature range- - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 2/ - - - - - - - - - 500 mW Lead temperature (soldering, 10 seconds) - - - - - - +260°C Thermal resistance, junction-to-case (θJC): Case C, D, and 2 - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ)- - - - - - - - - - - - - - +175°C

Supply voltage (VCC) - - - - - - - - - - - - - - - - +2.0 V dc to +6.0 V dc Case operating temperature range (TC)- - - - - - - - −55°C to +125°C Input rise or fall time: VCC = 2.0 V- - - - - - - - - - - - - - - - - - - - 0 to 1000 ns VCC = 4.5 V- - - - - - - - - - - - - - - - - - - - 0 to 500 ns VCC = 6.0 V- - - - - - - - - - - - - - - - - - - - 0 to 400 ns

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

September 27, 2023
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, TRIPLE 3-INPUT OR GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
August 29, 2017
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, TRIPLE 3-INPUT OR GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 26, 2011
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, TRIPLE 3-INPUT OR GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
June 7, 2005
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, TRIPLE 3-INPUT OR GATE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-87722
October 13, 1987
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, TRIPLE 3-INPUT OR GATE, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with complaint non-JAN devices"....

References

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