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DLA - SMD-5962-88669 REV B

MICROCIRCUIT, DIGITAL, CMOS, 2K X 9 FIRST-IN, FIRST-OUT (FIFO), MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 21 January 1994
Status: inactive
Page Count: 27
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 See 6.4 2048 × 9 FIFO 80 ns 02 See 6.4 2048 × 9 FIFO 65 ns 03 See 6.4 2048 × 9 FIFO 50 ns 04 See 6.4 2048 × 9 FIFO 40 ns 05 See 6.4 2048 × 9 FIFO 30 ns 06 See 6.4 2048 × 9 FIFO 20 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline X D-10 (28-lead, 1.490" × .610" × .232"), dual-in-line package Y See figure 1, (28-lead, 1.485" × .310" × .200"), dual-in-line package Z C-12 (32-terminal, .560" × .458" × .120"), chip carrier package rectangular U F-11 (28-lead, .740" × .380" × .090"), flat package

Supply voltage range - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to outputs in high-Z state- - - −0.5 V dc to +7.0 V dc DC input voltage range - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc 1/ DC output current - - - - - - - - - - - - - - - - 20 mA Maximum power dissipation 2/ - - - - - - - - - - 1.0 w Lead temperature (soldering, 10 seconds) - - - - - +260°C Thermal resistance, junction-to-case (ΘJC): Cases X and Z - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Case Y - - - - - - - - - - - - - - - - - - - - - 26°C/W 3/ Junction temperature (TJ) 4/ - - - - - - - - - - +150°C Storage temperature range - - - - - - - - - - - - −65°C to +150°C Temperature under bias - - - - - - - - - - - - - - −55°C to +125°C

Supply voltage range (VCC) - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Ground voltage (GND) - - - - - - - - - - - - - - - - 0 V dc Input high voltage (VIH) - - - - - - - - - - - - - - 2.2 V dc minimum 5/ Input low voltage (VIL) - - - - - - - - - - - - - - 0.8 V dc maximum Case operating temperature range (TC) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

March 28, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 9 FIRST-IN, FIRST-OUT (FIFO), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
February 1, 2016
MICROCIRCUIT, DIGITAL, CMOS, 2K X 9 FIRST-IN, FIRST-OUT (FIFO), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 22, 2007
MICROCIRCUIT, DIGITAL, CMOS, 2K X 9 FIRST-IN, FIRST-OUT (FIFO), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
February 25, 1997
MICROCIRCUIT, DIGITAL, CMOS, 2K X 9 FIRST-IN, FIRST-OUT (FIFO), MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. The complete PIN shall be as shown in the...
February 14, 1995
MICROCIRCUIT, DIGITAL, CMOS, 2K X 9 FIRST-IN, FIRST-OUT (FIFO), MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-88669 REV B
January 21, 1994
MICROCIRCUIT, DIGITAL, CMOS, 2K X 9 FIRST-IN, FIRST-OUT (FIFO), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
November 13, 1992
MICROCIRCUIT, DIGITAL, CMOS, 2K X 9 FIRST-IN, FIRST-OUT (FIFO), MONOLITHIC SILICON
A description is not available for this item.
February 10, 1989
MICROCIRCUIT, DIGITAL, CMOS, 2K X 9 FIRST-IN, FIRST-OUT (FIFO), MONOLITHIC SILICON
A description is not available for this item.
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