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DLA - SMD-5962-86875 REV C

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 28 April 1993
Status: inactive
Page Count: 31
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device types shall identify the circuit function as follows:

The case outlines shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X GDIP1-T48 or CDIP2-T48 48 dual-in-line Y See figure 1 48 square leadless chip carrier Z CQCC1-N52 52 square leadless chip carrier U See figure 1 48 flat pack

The lead finish shall be as specified in MIL-M-38510. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Output sink current - - - - - - - - - - - - - - - - 50 mA Output short circuit duration - - - - - - - - - - - 10 seconds Power dissipation (PD) - - - - - - - - - - - - - - - 1.5 W

Thermal resistance, junction-to-case (ΘJC): Case X - - - - - - - - - - - - - - - - - - - - - - 30°C/W 3/ Case Y and U - - - - - - - - - - - - - - - - - - - 12°C/W 3/ Case Z - - - - - - - - - - - - - - - - - - - - - - See MIL-STD-1835 Junction temperature - - - - - - - - - - - - - - - +150°C 4/ Temperature under bias - - - - - - - - - - - - - - −55°C to +125°C Storage temperature range - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - - - +300°C

Supply voltage range (VCC) - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Case operating temperature range (TC) - - - - - - −55°C to +125°C Minimum input high voltage Level (VIH) - - - - - - 2.2 V Maximum input low voltage level (VIL) - - - - - - 0.8 V

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

March 15, 2021
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
February 18, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
August 8, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-86875 REV C
April 28, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
September 20, 1991
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
October 30, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
May 11, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 1K X 8 DUAL PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.

References

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