DLA - SMD-5962-95809 REV B
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, INVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 15 April 2004 |
| Status: | inactive |
| Page Count: | 24 |
Document History
August 28, 2019
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, INVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead...
SMD-5962-95809 REV B
April 15, 2004
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, INVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
A description is not available for this item.
July 31, 1998
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, INVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535...
October 31, 1995
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, INVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...