scope:

This specification covers the detail requirements for monolithic silicon, bipolar, programmable logic microcircuits which employ titanium tungsten (TD-W), platinum silicide, and nichrome resistors as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead materials and finishes are provided for each type and are reflected in the complete part number. Special test requirements are included in this specification to screen against devices which may contain excess moisture in the package materials or internal atmosphere (see freeze-out test of 4.2.d).

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device type shall be as follows:

Device type. Circuit 01 16-input 8-output and-or invert gate array 02 16-input 8-output registered and-or gate array 03 16-input 6-output registered and-or gate array 04 16-input 4-output registered and-or gate array 05 16-input 4-output registered and-or exclusive or array 06 16-input 4-output registered and carry or exclusive or gate array 07 16-input 8-output and-or invert gate array 08 16-input 8-output registered and-or gate array 09 16-input 6-output registered and-or gate array 10 16-input 4-output registered and-or gate array

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Letter Case outline, (see MIL-M-38510, appendix C) R D-8 (20-lead, ¼" × 1-1/16" dual-in-line package) 2 C-2 (20-terminal, .350" × .350" square CCP) Y Figure 1 (20-lead, ⅜" × ⅜" flat package)

Supply voltage - - - - - - - - - - - - - - - - - −0.5 V to +12.0 V Input voltage range- - - - - - - - - - - - - - - −1.5 V to +12.0 V Storage temperature range- - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering 10 seconds)- - - - - 260°C Thermal resistance, junction-to-case (θ_JC) 1/ 2/- (See MIL-M-38510 appendix C)

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Output voltage applied - - - - - - - - - - - - - −1.5 V to +12.0 V Output sink current- - - - - - - - - - - - - - - 100 mA Maximum power dissipation (P_D) 2/ Device types 01, 02, 03, 04, 05, 06- - - - - - 2.0 W Device types 07, 08, 09, 10- - - - - - - - - - 1.1 W Maximum junction temperature (T_J)- - - - - - - - 175°C

Supply voltage - - - - - - - - - - - - - - - - - 4.5 minimum to 5.5 V maximum Minimum high-level input voltage - - - - - - - - 2.0 V Maximum low-level input voltage- - - - - - - - - 0.8 V Case operating temperature range - - - - - - - - −55° to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design application and logistic support of existing equipment.