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NPFC - MIL-M-38510/330

MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 5 April 1983
Status: inactive
Page Count: 26
scope:

This specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, positive NAND logic gate microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510, and as specified herein.

The device type shall be as follows:

Device type Circuit. 01 Quadruple, 2-input positive NAND gate 02 Hex, 1-input inverter gate 03 Triple, 3-input positive NAND gate 04 Dual, 4-input positive NAND gate

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Letter Case outline (see MIL-M-38510, appendix C) A F-1 (14-lead, ¼" × ¼"), flat package B F-3 (14-lead, 3/16" × ¼"), flat package C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat package X C-2 (20-terminal, .350" × .350" ), square chip carrier package, option A Y C-2 (20-terminal, .350" × .350"), square chip carrier package, option B

Supply voltage range- - - - - - - - - - - −0.5 V to +7.0 V Input voltage range - - - - - - - - - - - −1.2 V at −18 mA to +7.0 V Storage temperature range - - - - - - - - −65°C to +150°C Maximum power dissipation per device (PD)1/: Device type 01 - - - - - - - - - - - - 56 mW Device type 02- - - - - - - - - - - - - 84 mW Device type 03- - - - - - - - - - - - - 42 mW Device type 04- - - - - - - - - - - - - 28 mW Lead temperature (soldering, 10 seconds)- 300°C Thermal resistance, junction to case (θJC): Cases A, B, and D - - - - - - - - - - - 70°C/W Case C - - - - - - - - - - - - - - - - 50°C/W Cases X and Y - - - - - - - - - - - - - 60°C/W Junction temperature (TJ) - - - - - - - - 175°C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage - - - - - - - - - - - - - - - - - - - 4.5 V minimum to 5.5 V maximum Minimum high level input voltage (VIH) - - - - - - - 2.0 V Maximum low level input voltage (VIL)- - - - - - - - 0.8 V Normalized fanout (each output) 2/: Low logic level- - - - - - - - - - - - - - - - - - - 33 maximum High logic level - - - - - - - - - - - - - - - - - - 50 maximum Case operating temperature range (TC) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

Microcircuits, Digital, Bipolar Advanced Schottky TTL, Nand Gates, Monolithic Silicon
A description is not available for this item.
June 6, 2018
Microcircuits, Digital, Bipolar Advanced Schottky TTL, Nand Gates, Monolithic Silicon
A description is not available for this item.
August 23, 2013
Microcircuits, Digital, Bipolar Advanced Schottky TTL, Nand Gates, Monolithic Silicon
A description is not available for this item.
November 13, 2008
Microcircuits, Digital, Bipolar Advanced Schottky TTL, Nand Gates, Monolithic Silicon
This specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, positive NAND logic gate microcircuits. Two product assurance classes and a choice of case outlines...
November 25, 2003
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, positive NAND logic gate microcircuits. Two product assurance classes and a choice of case outlines...
July 3, 2002
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON
A description is not available for this item.
August 14, 1997
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON
A description is not available for this item.
April 18, 1997
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON
A description is not available for this item.
October 27, 1987
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON
A description is not available for this item.
May 6, 1986
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/330
April 5, 1983
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, positive NAND logic gate microcircuits. Two product assurance classes and a choice of case outlines...
December 6, 1982
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON
A description is not available for this item.
May 19, 1981
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON
A description is not available for this item.

References

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