NPFC - MIL-M-38510/330
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON
| Organization: | NPFC |
| Publication Date: | 5 April 1983 |
| Status: | inactive |
| Page Count: | 26 |
scope:
This specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, positive NAND logic gate microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number.
The part number shall be in accordance with MIL-M-38510, and as specified herein.
The device type shall be as follows:
Device type Circuit. 01 Quadruple, 2-input positive NAND gate 02 Hex, 1-input inverter gate 03 Triple, 3-input positive NAND gate 04 Dual, 4-input positive NAND gate
The device class shall be the product assurance level as defined in MIL-M-38510.
The case outline shall be designated as follows:
Letter Case outline (see MIL-M-38510, appendix C) A F-1 (14-lead, ¼" × ¼"), flat package B F-3 (14-lead, 3/16" × ¼"), flat package C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat package X C-2 (20-terminal, .350" × .350" ), square chip carrier package, option A Y C-2 (20-terminal, .350" × .350"), square chip carrier package, option B
Supply voltage range- - - - - - - - - - - −0.5 V to +7.0 V Input voltage range - - - - - - - - - - - −1.2 V at −18 mA to +7.0 V Storage temperature range - - - - - - - - −65°C to +150°C Maximum power dissipation per device (PD)1/: Device type 01 - - - - - - - - - - - - 56 mW Device type 02- - - - - - - - - - - - - 84 mW Device type 03- - - - - - - - - - - - - 42 mW Device type 04- - - - - - - - - - - - - 28 mW Lead temperature (soldering, 10 seconds)- 300°C Thermal resistance, junction to case (θJC): Cases A, B, and D - - - - - - - - - - - 70°C/W Case C - - - - - - - - - - - - - - - - 50°C/W Cases X and Y - - - - - - - - - - - - - 60°C/W Junction temperature (TJ) - - - - - - - - 175°C
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Supply voltage - - - - - - - - - - - - - - - - - - - 4.5 V minimum to 5.5 V maximum Minimum high level input voltage (VIH) - - - - - - - 2.0 V Maximum low level input voltage (VIL)- - - - - - - - 0.8 V Normalized fanout (each output) 2/: Low logic level- - - - - - - - - - - - - - - - - - - 33 maximum High logic level - - - - - - - - - - - - - - - - - - 50 maximum Case operating temperature range (TC) - - - - - - - −55°C to +125°C
intended Use:
Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
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