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DOD - SMD 5962-91694

MICROCIRCUIT, LINEAR, VOLTAGE CONTROLLED GAIN AMPLIFIER, MONOLITHIC SILICON

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Organization: DOD
Publication Date: 8 December 1997
Status: inactive
Page Count: 13
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 CLC520 Voltage controlled gain amplifier

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535. appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-14 14 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

1/

Supply voltage (V±) --------------------------------------- ±7 V dc Output Current (IOUT) ------------------------------------- 70 mA Common mode input voltage (VCM) --------------------------- V± Differential input voltage -------------------------------- 10 V Gain controlled input voltage(VG) ------------------------- V± Referenced input voltage (VREF) --------------------------- V± Power dissipation (PD) ------------------------------------ 1.2 W Junction temperature (TJ) --------------------------------- +175°C Storage temperature range --------------------------------- −65°C to +150°C Lead temperature (soldering, 10 seconds) ------------------ +300°C Thermal resistance, junction-to-case (ΘJC) ---------------- See MIL-STD-1835 Thermal resistance, junction-to-ambient (ΘJA): Case C (side braze) -------------------------------------- 70°C/W Case C (cerdip) ------------------------------------------ 90°C/W Case 2 --------------------------------------------------- 55°C/W

Supply voltage (V±) ---------------------------- --------- ±5 V dc Gain range (AV) ------------------------------- ---------- ±2 to ±100 Reference input voltage (VREF) --------------------- ----- ±150 mV Ambient operating temperature range (TA) ------------- --- −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

October 24, 2019
MICROCIRCUIT, LINEAR, VOLTAGE CONTROLLED GAIN AMPLIFIER, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead...
January 16, 2014
MICROCIRCUIT, LINEAR, VOLTAGE CONTROLLED GAIN AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
February 4, 2005
MICROCIRCUIT, LINEAR, VOLTAGE CONTROLLED GAIN AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD 5962-91694
December 8, 1997
MICROCIRCUIT, LINEAR, VOLTAGE CONTROLLED GAIN AMPLIFIER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
November 9, 1994
MICROCIRCUIT, LINEAR, VOLTAGE CONTROLLED GAIN AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
October 15, 1993
MICROCIRCUIT, LINEAR, VOLTAGE CONTROLLED GAIN AMPLIFIER, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...
May 6, 1993
MICROCIRCUIT, LINEAR, VOLTAGE CONTROLLED GAIN AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.
June 24, 1992
MICROCIRCUIT, LINEAR, VOLTAGE CONTROLLED GAIN AMPLIFIER, MONOLITHIC SILICON
A description is not available for this item.

References

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