NPFC - MIL-PRF-19500/604
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7272, 2N7275, 2N7278, AND 2N7281, JANTXV, AND JANS
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| Organization: | NPFC |
| Publication Date: | 17 March 2018 |
| Status: | active |
| Page Count: | 21 |
scope:
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose characterization only), power transistor. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to three radiation levels "M", "D", and R" are provided for JANS and JANTXV product assurance levels
intended Use:
The notes specified in MIL-PRF-19500 are applicable to this specification.
Document History
August 17, 2023
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7272, 2N7275, 2N7278, AND 2N7281, JANTXV, AND JANS
A description is not available for this item.
MIL-PRF-19500/604
March 17, 2018
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7272, 2N7275, 2N7278, AND 2N7281, JANTXV, AND JANS
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose characterization only), power transistor. Two levels of product...
May 24, 2016
Semiconductor Device, Field Effect Radiation Hardened (Total Dose Characterization Only) Transistors, N-Channel, Silicon, Types 2N7272, 2N7275, 2N7278, and 2N7281, JANTXVM, D, and R, and JANSM, D, and R
A description is not available for this item.
July 14, 2011
Semiconductor Device, Field Effect Radiation Hardened (Total Dose Characterization Only) Transistors, N-Channel, Silicon, Types 2N7272, 2N7275, 2N7278, and 2N7281, JANTXVM, D, and R, and JANSM, D, and R
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose characterization only), power transistor. Two levels of product...
July 30, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7272, 2N7275, 2N7278, AND 2N7281, JANTXVM, D, AND R, AND JANSM, D, AND R
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose characterization only), power transistor. Two levels of product...
September 14, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7272, 2N7275, 2N7278, AND 2N7281 JANTXVM, D, R, AND JANSM, D AND R
A description is not available for this item.
June 21, 1999
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS N-CHANNEL, SILICON TYPES 2N7272,2N7275,2N7278, AND 2N7281 JANTXVM, D, R, AND JANSM, D AND R
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose characterization only), power transistor. Two levels of product...
March 24, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7272,2N7275,2N7278, AND 2N7281 JANTXVM, D, R, AND JANSM, D AND R
A description is not available for this item.
November 10, 1992
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7272,2N7275,2N7278, AND 2N7281 JANTXVM, D, R, AND JANSM, D AND R
This specification covers the detail requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose characterization only), power transistor intended for use in high density...