DLA - MIL-S-19500/604
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7272,2N7275,2N7278, AND 2N7281 JANTXVM, D, R, AND JANSM, D AND R
inactive
| Organization: | DLA |
| Publication Date: | 10 November 1992 |
| Status: | inactive |
| Page Count: | 25 |
scope:
This specification covers the detail requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose characterization only), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-S-19500.
See figure 1, TO-205AF.
TA = +25°C unless otherwise specified. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA/Parts Project Office (NPPO), NASA Goddard Space Flight Center, Code 310.A, Greenbelt, MD 20771 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
August 17, 2023
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7272, 2N7275, 2N7278, AND 2N7281, JANTXV, AND JANS
A description is not available for this item.
March 17, 2018
TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7272, 2N7275, 2N7278, AND 2N7281, JANTXV, AND JANS
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose characterization only), power transistor. Two levels of product...
May 24, 2016
Semiconductor Device, Field Effect Radiation Hardened (Total Dose Characterization Only) Transistors, N-Channel, Silicon, Types 2N7272, 2N7275, 2N7278, and 2N7281, JANTXVM, D, and R, and JANSM, D, and R
A description is not available for this item.
July 14, 2011
Semiconductor Device, Field Effect Radiation Hardened (Total Dose Characterization Only) Transistors, N-Channel, Silicon, Types 2N7272, 2N7275, 2N7278, and 2N7281, JANTXVM, D, and R, and JANSM, D, and R
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose characterization only), power transistor. Two levels of product...
July 30, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7272, 2N7275, 2N7278, AND 2N7281, JANTXVM, D, AND R, AND JANSM, D, AND R
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose characterization only), power transistor. Two levels of product...
September 14, 2001
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7272, 2N7275, 2N7278, AND 2N7281 JANTXVM, D, R, AND JANSM, D AND R
A description is not available for this item.
June 21, 1999
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS N-CHANNEL, SILICON TYPES 2N7272,2N7275,2N7278, AND 2N7281 JANTXVM, D, R, AND JANSM, D AND R
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose characterization only), power transistor. Two levels of product...
March 24, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7272,2N7275,2N7278, AND 2N7281 JANTXVM, D, R, AND JANSM, D AND R
A description is not available for this item.
MIL-S-19500/604
November 10, 1992
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7272,2N7275,2N7278, AND 2N7281 JANTXVM, D, R, AND JANSM, D AND R
This specification covers the detail requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose characterization only), power transistor intended for use in high density...