ISO 14706
Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
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| Organization: | ISO |
| Publication Date: | 1 August 2014 |
| Status: | active |
| Page Count: | 32 |
| ICS Code (Chemical analysis): | 71.040.40 |
scope:
This International Standard specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following:
- elements of atomic number from 16 (S) to 92 (U);
- contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 t o 1 × 1014 atoms/cm2;
- contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method (see 3.4).
Document History
ISO 14706
August 1, 2014
Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
This International Standard specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The...
December 15, 2000
Surface Chemical Analysis - Determination of Surface Elemental Comtamination on Silicon Wafers by Total-Reflection X-Ray Fluorescence (TXRF) Spectroscopy
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