NPFC - MIL-M-38510/300
MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, AND GATES, MONOLITHIC SILICON
| Organization: | NPFC |
| Publication Date: | 15 July 1987 |
| Status: | inactive |
| Page Count: | 37 |
scope:
This specification covers the detail requirements for monolithic silicon, low power Schottky, TTL, positive NAND logic gate microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number.
The part number shall be in accordance with MIL-M-38510.
The device types shall be as follows:
Device type Circuit 01 Quadruple, 2-input positive NAND gate 02 Quadruple, 2-input positive NAND gate (open collector output) 03 Hex, 1-input inverter gate 04 Hex, 1-input inverter gate (open collector output) 05 Triple, 3-input positive NAND gate 06 Triple, 3-input positive NAND gate (open collector output) 07 Dual, 4-input positive NAND gate. 08 Dual, 4-input positive NAND gate (open collector output) 09 Single, 8-input positive NAND gate
The device class shall be the product assurance level as defined in MIL-M-38510.
The case outlines shall be designated as follows:
Letter Case outline (see MIL-M-38510, appendix C) A F-1 (14-lead, ¼" × ¼"), flat package B F-3 (14-lead, 3/16" × ¼"), flat package C D-1 (14-lead, ¼" × ¾"), dual-in-line package D F-2 (14-lead, ¼" × ⅜"), flat package 2 C-2 (20-terminal, .350" × .350"), square chip carrier package)
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center, (RBE-2) Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Supply voltage range - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range - - - - - - - - - - - −1.5 V dc at −18 mA to +5.5 V dc Storage temperature range - - - - - - - - −65°C to +150°C Maximum power dissipation per gate, (PD) 1/ 6.1 mW dc Lead temperature (soldering, 10 seconds) - +300°C Thermal resistance, junction-to-case (θJC): Cases A, B, C, and D - - - - - - - - - - (See MIL-M-38510, appendix C) Case 2 - - - - - - - - - - - - - - - - - +80°C/W 2/ Junction temperature (TJ) 3/ - - - - - - - +175°C
Supply voltage (VCC) - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage (VIH) - - +2.0 V dc Maximum low level input voltage (VIL)- - - +0.7 V dc Case operating temperature range (TC)- - - −55°C to +125°C
intended Use:
Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.
Document History