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NPFC - MIL-M-38510/201

MICROCIRCUIT, DIGITAL, 512-BIT, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 24 March 1986
Status: inactive
Page Count: 28
scope:

This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome resistors as the fusible link or programming element. One product assurance class and a choice of case outlines and lead finishes are provided for each type and are reflected in the part number.

The part number shall be in accordance with MIL-M-38510 except the JAN or "J" certification shall not be used.

The device type shall be as follows:

Device type Circuit 01 64 words/8 bits per word PROM with open collector 02 64 words/8 bits per word PROM with internal pull-up resistor

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outline shall be designated as follows:

Letter Case outline (see MIL-M-38510, appendix C) J D-3 (24-lead, ½" × 1-¼"), dual-in-line package K F-6 (24-lead, ⅜" × ⅝"), flat package Z F-8 (24-lead, ¼" × ⅜"), flat package

Supply voltage range - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range- - - - - - - - - - - - - −1.5 V dc at −12 mA to +5.5 V dc Storage temperature range- - - - - - - - - - −65° to +150°C Lead temperature (soldering, 10 seconds) - - 300°C Thermal resistance, junction-to-case (θJC)1/: See MIL-M-38510, appendix C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Output supply voltage range- - - - - - - - −0.5 V dc to +7.0 V dc Output sink current- - - - - - - - - - - - +30 mA Maximum power dissipation (PD)2/ - - - - - 575 mW dc Maximum junction temperature (TJ) 3/ - - - 175°C

Supply voltage - - - - - - - - - - - - - - 4.75 V dc minimum to 5.25 V dc maximum Minimum high level input voltage (VIH) - - 2.0 V dc Maximum low level input voltage (VIL)- - - 0.8 V dc Normalized fanout (each output) 4/ - - - - 6 maximum (10 mA) Case operating temperature range (TC)- - - −55° to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

May 7, 2015
Microcircuits, Digital, 512-Bit, Bipolar, Programmable Read-Only Memory (PROM), Monolithic Silicon
A description is not available for this item.
August 3, 2010
Microcircuits, Digital, 512-Bit, Bipolar, Programmable Read-Only Memory (PROM), Monolithic Silicon
This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors as the fusible link or programming element. One product...
October 12, 2005
MICROCIRCUIT, DIGITAL, 512-BIT, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors as the fusible link or programming element. One product...
April 16, 2001
MICROCIRCUIT, DIGITAL, 512-BIT, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/201
March 24, 1986
MICROCIRCUIT, DIGITAL, 512-BIT, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome resistors as the fusible link or programming element. One product...
April 9, 1982
MICROCIRCUIT, DIGITAL, 512-BIT, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
December 14, 1978
MICROCIRCUIT, DIGITAL, 512-BIT, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
April 7, 1978
MICROCIRCUIT, DIGITAL, 512-BIT, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
July 17, 1973
MICROCIRCUIT, DIGITAL, 512-BIT, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.
August 21, 1972
MICROCIRCUIT, DIGITAL, 512-BIT, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
A description is not available for this item.

References

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