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DLA - SMD-5962-89664

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, CASCADABLE 64 X 8 FIFO, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 22 August 1989
Status: inactive
Page Count: 18
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Shift rate 01 See 6.6 64 × 8 FIFO 15 MHz 02 See 6.6 64 × 8 FIFO 25 MHz

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline X See figure 1, (28-lead, 1.490" × .310" × .200"), dual-in-line package Y F-11 (28-lead, .740" × .380" × .090"), flat package 3 C-4 (28-terminal, .460" × .460" × .100"), square chip carrier package

Supply voltage range - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to outputs - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC Input voltage - - - - - - - - - - - - - - - - - - −3.0 V dc to +7.0 V dc DC output current - - - - - - - - - - - - - - - - - 20 mA Maximum power dissipation - - - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - - +260°C Thermal resistance, junction-to-case (θJC) Cases Y and 3 - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Case X - - - - - - - - - - - - - - - - - - - - - - +26°C/W 1/ Junction temperature (TJ) 2/ - - - - - - - - - - - +150° C Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Temperature under bias - - - - - - - - - - - - - - - −55°C to +125°C

Supply voltage range (VCC) - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Ground voltage (GND) - - - - - - - - - - - - - - - - 0 V dc Input high voltage (VIH) - - - - - - - - - - - - - - 2.2 V dc minimum Input low voltage (VIL)- - - - - - - - - - - - - - - 0.8 V dc maximum Case operating temperature range (TC)- - - - - - - - −55° C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

May 24, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, CASCADABLE 64 X 8 FIFO, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
September 11, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, CASCADABLE 64 X 8 FIFO, MONOLITHIC SILICON
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
February 28, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, CASCADABLE 64 X 8 FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 16, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, CASCADABLE 64 X 8 FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89664
August 22, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, CASCADABLE 64 X 8 FIFO, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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