JEDEC - JESD60
A Procedure for Measuring P-Channel MOSFET Hot-Carrier-Induced Degradation at Maximum Gate Current under DC Stress
inactive
| Organization: | JEDEC |
| Publication Date: | 1 April 1997 |
| Status: | inactive |
| Page Count: | 15 |
Document History
September 1, 2004
A Procedure for Measuring P-Channel MOSFET Hot-Carrier- Induced Degradation Under DC Stress
This method establishes a standard procedure for accelerated testing of the hot-carrier-induced change of a p-channel MOSFET. The objective is to provide a minimum set of measurements so that...
JESD60
April 1, 1997
A Procedure for Measuring P-Channel MOSFET Hot-Carrier-Induced Degradation at Maximum Gate Current under DC Stress
A description is not available for this item.
April 1, 1997
Procedure for Measuring P-Channel MOSFET Hot-Carrier-Induced Degradation at Maximum Gate Current under DC Stress
A description is not available for this item.