JEDEC JESD 60
A Procedure for Measuring P-Channel MOSFET Hot-Carrier- Induced Degradation Under DC Stress
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| Organization: | JEDEC |
| Publication Date: | 1 September 2004 |
| Status: | active |
| Page Count: | 24 |
scope:
This method establishes a standard procedure for accelerated testing of the hot-carrier-induced change of a p-channel MOSFET. The objective is to provide a minimum set of measurements so that accurate comparisons can be made between different technologies. The measurements specified should be viewed as a starting pint in the characterization and benchmarking of the trasistor manufacturing process.
Document History
JEDEC JESD 60
September 1, 2004
A Procedure for Measuring P-Channel MOSFET Hot-Carrier- Induced Degradation Under DC Stress
This method establishes a standard procedure for accelerated testing of the hot-carrier-induced change of a p-channel MOSFET. The objective is to provide a minimum set of measurements so that...
April 1, 1997
A Procedure for Measuring P-Channel MOSFET Hot-Carrier-Induced Degradation at Maximum Gate Current under DC Stress
A description is not available for this item.
April 1, 1997
Procedure for Measuring P-Channel MOSFET Hot-Carrier-Induced Degradation at Maximum Gate Current under DC Stress
A description is not available for this item.
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