UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

DLA - SMD-5962-88611 REV A

MICROCIRCUITS, DIGITAL, CMOS 4K X 4 SRAM WITH SEPARATE I/O, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 9 December 1991
Status: inactive
Page Count: 19
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 See 6.4 4K × 4 CMOS SRAM with separate I/O 70 ns 02 See 6.4 4K × 4 CMOS SRAM with separate I/O 55 ns 03 See 6.4 4K × 4 CMOS SRAM with separate I/O 45 ns 04 See 6,4 4K × 4 CMOS SRAM with separate I/O 35 ns 05 See 6.4 4K × 4 CMOS SRAM with separate I/O 25 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline K F-6 (24-lead, .640" × .420" × .090"), flat package L D-9 (24-lead, 1 280" × 310" × 200"), dual-in-line package 3 C-4 (28-terminal, .460 × .460 × .100"), square chip carrier package

Terminal voltage range with respect to ground- - - - −0.5 V dc to +7.0 V dc DC output current- - - - - - - - - - - - - - - - - - 50 mA Storage temperature range- - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - - +260°C Thermal resistance, Junction-to-case (θJC): Cases L, K, and 3 - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ)- - - - - - - - - - - - - - +150°C 1/

Supply voltage range (VCC) - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc High level input voltage range (VIH) - - - - - - - - 2.2 V dc to 6.0 V dc Low level input voltage range (VIL) - - - - - - - - −0.5 V dc to +0.8 V dc2/ Case operating temperature range (TC)- - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

October 2, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K x 4 STATIC RAM WITH SEPARATE I/O, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 23, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K x 4 STATIC RAM WITH SEPARATE I/O, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
October 30, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K x 4 STATIC RAM WITH SEPARATE I/O, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-88611 REV A
December 9, 1991
MICROCIRCUITS, DIGITAL, CMOS 4K X 4 SRAM WITH SEPARATE I/O, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
December 7, 1988
MICROCIRCUITS, DIGITAL, CMOS 4K X 4 SRAM WITH SEPARATE I/O, MONOLITHIC SILICON
A description is not available for this item.

References

Advertisement