DOD - SMD 5962-88611
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K x 4 STATIC RAM WITH SEPARATE I/O, MONOLITHIC SILICON
inactive
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| Organization: | DOD |
| Publication Date: | 30 October 2008 |
| Status: | inactive |
| Page Count: | 16 |
scope:
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
October 2, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K x 4 STATIC RAM WITH SEPARATE I/O, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 23, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K x 4 STATIC RAM WITH SEPARATE I/O, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD 5962-88611
October 30, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K x 4 STATIC RAM WITH SEPARATE I/O, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
December 9, 1991
MICROCIRCUITS, DIGITAL, CMOS 4K X 4 SRAM WITH SEPARATE I/O, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
December 7, 1988
MICROCIRCUITS, DIGITAL, CMOS 4K X 4 SRAM WITH SEPARATE I/O, MONOLITHIC SILICON
A description is not available for this item.