DLA - MIL-S-19500/564D
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, P-CHANNEL, SILICûN TYPES 216849 AND 216851 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
inactive
| Organization: | DLA |
| Publication Date: | 9 December 1994 |
| Status: | inactive |
| Page Count: | 20 |
scope:
This specification covers the detail requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-S-19500. Two levels of product assurance are provided for each unencapsulated device type.
See figures 1 and 2, TO-205AF (formerly TO-39). See figures 3, 4, 5, and 6.4 for JANHC and JANKC die dimensions.
Unless otherwise specified, TA = +25°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Electronics Supply Center, ATTN: DESC-ELD, 1507 Wilmington Pike, Dayton, OH 45444-5765, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
October 16, 2023
TRANSISTOR, FIELD EFFECT, P-CHANNEL, SILICON, TYPES 2N6849, AND 2N6851, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
July 31, 2018
TRANSISTOR, FIELD EFFECT, P-CHANNEL, SILICON, TYPES 2N6849, AND 2N6851, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor for use in particular power-switching applications. Four levels of product assurance...
November 1, 2014
TRANSISTOR, FIELD EFFECT, P-CHANNEL, SILICON, TYPES 2N6849, 2N6849U, 2N6851 AND 2N6851U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor for use in particular power-switching applications.. Four levels of product...
June 2, 2009
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6849, 2N6849U, 2N6851 AND 2N6851U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as...
June 13, 2005
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6849, 2N6849U, 2N6851 AND 2N6851U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as...
November 5, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6849, 2N6849U, 2N6851 AND 2N6851U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as...
November 8, 2002
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6849, 2N6849U, 2N6851 AND 2N6851U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
December 22, 1997
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6849, 2N6849U, 2N6851 AND 2N6851U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as...
MIL-S-19500/564D
December 9, 1994
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, P-CHANNEL, SILICûN TYPES 216849 AND 216851 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product...
January 7, 1994
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6849 AND 2N6851 JANTX, JANTXV, JANS, JANHC AND JANKC
This specification covers the detail requirements for a P-Channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product...
May 26, 1992
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6849 AND 2N6851 JANTX, JANTXV, AND JANC
A description is not available for this item.
February 20, 1991
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6849 AND 2N6851 JANTX, JANTXV AND JANS
A description is not available for this item.
May 6, 1988
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6849 AND 2N6851 JANTX, JANTXV AND JANS
A description is not available for this item.
September 15, 1987
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6849 AND 2N6851 JANTX, JANTXV AND JANS
A description is not available for this item.
January 24, 1986
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6849 AND 2N6851 JANTX, JANTXV AND JANS
A description is not available for this item.