DLA - SMD-5962-96614

MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, DUAL MONOSTABLE MULTIVIBRATOR, MONOLITHIC SILICON

inactive

Organization:	DLA
Publication Date:	4 December 1995
Status:	inactive
Page Count:	14

scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 4098B Radiation hardened CMOS dual monostable multivibrator 02 4098BN Radiation hardened CMOS dual monostable multivibrator with neutron irradiated die

The device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-I-38535

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack

The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (V_DD) . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V dc to +20 V dc Input voltage range . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V dc to V_DD + 0.5 V dc DC input current, any one input. . . . . . . . . . . . . . . . . . . . . . . ±10 mA Device dissipation per output transistor . . . . . . . . . . . . . . . . . . 100 mW Storage temperature range (T_STG) . . . . . . . . . . . . . . . . . . . . . . −65°C to +150°C Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . +265°C Thermal resistance, junction-to-case (Θ_JC): Case E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24°C/W Case X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29°C/W Thermal resistance, junction-to-ambient Θ_JA): Case E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73°C/W Case X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114°C/W Junction temperature (T_J). . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Maximum power dissipation at T_A = +125°C (P_D): 4/ Case E . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68 W Case X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.44 W

Supply voltage range (V_DD) . . . . . . . . . . . . . . . . . . . . . . . . . 3.0 V dc to +18 V dc Case operating temperature range (T_C). . . . . . . . . . . . . . . . . . . . −55°C to +125°C Input voltage (V_IN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to V_DD Output voltage (V_OUT). . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to V_DD Radiation features: Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 × 10⁵ Rads (Si) Single event phenomenon (SEP) effective linear energy threshold, no upsets or latchup (see 4.4.4.5.). . . . . . >75 MEV/cm²/mg) 5/ Dose rate upset (20 ns pulse) . . . . . . . . . . . . . . . . . . . . . . > 5 × 10⁸ Rads(Si)/s 5/ Dose rate latch-up . . . . . . . . . . . . . . . . . . . . . . . . . . . > 2 × 10⁸ Rads(Si)/s 5/ Dose rate survivability . . . . . . . . . . . . . . . . . . . . . . . . . > 5 × 10¹¹ Rads(Si)/s 5/ Neutron irradiated (device type 02) . . . . . . . . . . . . . . . . . . . > 1 × 10¹⁴ neutrons/cm 2/

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More