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DLA - SMD-5962-89666

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 9 PARALLEL FIFO, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 9 October 1990
Status: inactive
Page Count: 23
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (see 6.6) 256 × 9-bit parallel FIFO 120 ns 02 (see 6.6) 256 × 9-bit parallel FIFO 80 ns 03 (see 6.6) 256 × 9-bit parallel FIFO 65 ns 04 (see 6.6) 256 × 9-bit parallel FIFO 50 ns 05 (see 6,6) 256 × 9-bit parallel FIFO 40 ns 06 (see 6.6) 256 × 9-bit parallel FIFO 30 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline X D-15 (28-lead, 1.485" × .310" × .230"), dual-in-line package Y D-10 (28-lead, 1.490" × .610" × .232"), dual-in-line package Z F-11 (28-lead, .740" × .380" × .090"), flat package U C-12 (32-terminal, .560" × .458" × .120"), rectangular chip carrier package

Terminal voltage with respect to ground - - - - - - −0.5 V dc to +7.0 V dc DC output current - - - - - - - - - - - - - - - - - 50 mA Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - - +260°C Thermal resistance, junction-to-case (θJC): Case X - - - - - - - - - - - - - - - - - - - - - - 30°C/W Cases Y, Z, and U - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - - - +150°C 1/

Supply voltage range (VCC) - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Minimum high level input voltage (VIH) - - - - - - - 2.2 V dc Maximum low level input voltage (VIL) - - - - - - - +0.8 V dc 2/ Case operating temperature range (TC) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

June 2, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 9 PARALLEL FIFO, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
May 24, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 9 PARALLEL FIFO, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
October 21, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 9 PARALLEL FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 2, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 9 PARALLEL FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 2, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 9 PARALLEL FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 21, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 9 PARALLEL FIFO, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-89666
October 9, 1990
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 256 X 9 PARALLEL FIFO, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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