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DLA - SMD-5962-91518

MICROCIRCUIT, MEMORY, DIGITAL, ECL, 1K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 19 March 1993
Status: inactive
Page Count: 21
scope:

This drawing forms a part of a one part- one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and space application (device classes S and V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of radiation hardness assurance (RHA) levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes M, B, and S RHA marked devices shall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked device shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 10E474L 1K × 4 ECL SRAM 7 ns 02 10E474L 1K × 4 ECL SRAM 5 ns

This device class designator shall be a single letter identifying the product assurance level (see 6.6 herein) as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q or V Certification and qualification to MIL-I-38535

The case outlines shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X GDIP5-T24 or CDIP6-T24 24 dual-in-line Y GQCC1-J28 28 J-leaded chip carrier Z See figure 1 24 flat pack

The lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-38535 for classes Q and V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VEE to VCC) - - - - - - - −7.0 V dc to +0.5 V dc DC Input voltage range - - - - - - - - - - - - VEE to +0.5 V dc Output current - - - - - - - - - - - - - - - - −50 mA Maximum power dissipation - - - - - - - - - - - 1.04 W Lead temperature (soldering, 10 seconds) - - - +260°C Thermal resistance, junction-to-case (θJC): Case outlines X and Y - - - - - - - - - - - - See MIL-STD-1835 Case outline Z - - - - - - - - - - - - - - - 20°C/W 2/ Junction temperature (TJ) - - - - - - - - - - - +175°C Storage temperature range - - - - - - - - - - - −65°C to +150°C Temperature under bias- - - - - - - - - - - - - −55°C to +125°C

Supply voltage (VEE) - - - - - - - - - - - - - −5.46 V dc to −4.94 V dc Minimum high level input voltage (VIH): TA = +25°C - - - - - - - - - - - - - - - - - −1.130 V TC = +125°C - - - - - - - - - - - - - - - - - −1.030 V TC = −55°C - - - - - - - - - - - - - - - - - −1.260 V Maximum low-level input voltage (VIL): TA = +25°C - - - - - - - - - - - - - - - - - −1.475 V TC = +125°C - - - - - - - - - - - - - - - - - −1.450 V TC = −55°C - - - - - - - - - - - - - - - - - −1.540 V Case operating temperature range (TC) - - - - - −55°C to +125°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) - - 3/ percent

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

February 22, 2018
MICROCIRCUITS, MEMORY, DIGITAL, ECL, 1K x 4 HIGH-SPEED STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
February 23, 2012
MICROCIRCUITS, MEMORY, DIGITAL, ECL, 1K x 4 HIGH-SPEED STATIC RAM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-91518
March 19, 1993
MICROCIRCUIT, MEMORY, DIGITAL, ECL, 1K X 4 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing forms a part of a one part- one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...

References

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