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DLA - SMD-5962-38128 REV C

MICROCIRCUIT, LINEAR, RADIATION HARDENED, PROGRAMMABLE VOLTAGE REFERENCE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 17 June 1998
Status: inactive
Page Count: 14
scope:

This drawing documents two product assurance class levels consisting of high reliability (device Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number Circuit function 01 AD584S Pin programmable voltage reference 02 AD584T Pin programmable voltage reference 03 MX584S Pin programmable voltage reference 04 MX584T Pin programmable voltage reference

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can P GDIP1-T8 or CDIP-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage (VIN) ..................................... 40 V Power dissipation at +25°C (PD) .......................... 600 mW Junction temperature (TJ) ................................ +175°C Storage temperature range ................................ −65°C to +175°C Lead temperature (soldering, 10 seconds) ................. 300°C Thermal resistance, junction-to-case (θJC) ............... See MIL-STD-1835 Thermal resistance, junction-to-ambient (θJA) ............ 120°C/W

Supply voltage range (VIN) ............................... 4.5 V minimum to 30 V maximum Ambient operating temperature range (TA) ................. −55°C to +125°C

Total dose ............................................... ≤ 100 Krads

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

December 13, 2017
MICROCIRCUIT, LINEAR, RADIATION HARDENED, PROGRAMMABLE VOLTAGE REFERENCE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
November 29, 2011
MICROCIRCUIT, LINEAR, RADIATION HARDENED, PROGRAMMABLE VOLTAGE REFERENCE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
January 18, 2005
MICROCIRCUIT, LINEAR, RADIATION HARDENED, PROGRAMMABLE VOLTAGE REFERENCE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
September 6, 2002
MICROCIRCUIT, LINEAR, RADIATION HARDENED, PROGRAMMABLE VOLTAGE REFERENCE, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-38128 REV C
June 17, 1998
MICROCIRCUIT, LINEAR, RADIATION HARDENED, PROGRAMMABLE VOLTAGE REFERENCE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
November 27, 1996
MICROCIRCUIT, LINEAR, RADIATION HARDENED, PROGRAMMABLE VOLTAGE REFERENCE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
October 20, 1993
MICROCIRCUIT, LINEAR, RADIATION HARDENED, PROGRAMMABLE VOLTAGE REFERENCE, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...
June 17, 1992
MICROCIRCUIT, LINEAR, RADIATION HARDENED, PROGRAMMABLE VOLTAGE REFERENCE, MONOLITHIC SILICON
A description is not available for this item.
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