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DLA - SMD-5962-89891

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM WITH OE AND DUAL CE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 26 March 1990
Status: inactive
Page Count: 17
scope:

This drawing, describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 See 6.6 16K × 4 Static RAM 25 ns (data retention) 02 See 6.6 with [O bar][E bar] and dual [C bar][E bar] 25 ns 03 See 6.6 20 ns (data retention) 04 See 6.6 20 ns 05 See 6.6 15 ns (data retention) 06 See 6.6 15 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline L D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package X C-11 (28-terminal, .560" × .358" × .120") leadless chip carrier package

Supply voltage range (VCC)- - - - - - - - - - - - - −0.5 V dc to +7.0 V dc 1/ DC output current - - - - - - - - - - - - - - - - - 20 mA Ambient storage temperature range - - - - - - - - - −65°C to +150°C Temperature under bias range- - - - - - - - - - - - −55°C to +125°C Thermal resistance, junction-to-case (θJC): Cases L and X - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Power dissipation - - - - - - - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds)- - - - - - +260°C

Supply voltage (VCC) - - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc 1/ Ground voltage (VSS), (GND) - - - - - - - - - - - - 0 V dc Input high voltage range (VIH) - - - - - - - - - - +2.2 V dc to VCC +0.5 V dc Input low voltage range (VIL) - - - - - - - - - - - −0.5 V dc to 0.8 V dc 2/ Operating case temperature range (TC) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

October 25, 2022
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM WITH OE AND DUAL CE, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
December 14, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM WITH OE AND DUAL CE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
June 7, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM WITH OE AND DUAL CE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 30, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM WITH OE AND DUAL CE, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89891
March 26, 1990
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 4 SRAM WITH OE AND DUAL CE, MONOLITHIC SILICON
This drawing, describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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