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DOD - SMD 5962-89883

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 9 SRAM (STANDARD POWER), MONOLITHIC SILICON

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Organization: DOD
Publication Date: 27 November 1995
Status: inactive
Page Count: 15
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Toggle speed 01 See 6.6 8192 × 9 CMOS static RAM 55 ns 02 See 6.6 8192 × 9 CMOS static RAM 45 ns 03 See 6.6 8192 × 9 CMOS static RAM 35 ns 04 See 6.6 8192 × 9 CMOS static RAM 35 ns

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X CDIP3-T28 and GDIP4-T28 28 dual-in-line package Y CDFP4-F28 28 flat package Z CQCC3-N28 28 rectangular chip carrier package

Supply voltage to ground potential range - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to outputs range- - - - - - - - - −0.5 V dc to +7.0 V dc DC input voltage range - - - - - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc DC output current - - - - - - - - - - - - - - - - - 20 mA Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - 1.0 w Lead temperature (soldering, 10 seconds) - - - - - - +300°C Thermal resistance, junction-to-case (ΘJC): Cases X and Z - - - - - - - - - - - - - - - - - - See MIL-STD-1835 Case Y - - - - - - - - - - - - - - - - - - - - - - 30°C/W Junction temperature (TJ) - - - - - - - - - - - - - +150°C 1/

Supply voltage range (VCC) - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc High level input voltage range (VIH) - - - - - - - - 2.2 V dc to VCC + 0.5 V dc Low level input voltage range (VIL)- - - - - - - - - −0.3 V dc to +0.8 V dc Case operating temperature range (TC)- - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

November 3, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K x 9 STATIC RAM (STANDARD POWER), MONOLITHIC SILICON
A description is not available for this item.
July 15, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K x 9 STATIC RAM (STANDARD POWER), MONOLITHIC SILICON
Microcircuits conforming to this draw ing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
November 19, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K x 9 STATIC RAM (STANDARD POWER), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD 5962-89883
November 27, 1995
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 9 SRAM (STANDARD POWER), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
July 8, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 9 SRAM (STANDARD POWER), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
January 26, 1990
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 9 SRAM (STANDARD POWER), MONOLITHIC SILICON
A description is not available for this item.

References

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