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DLA - SMD-5962-87650 REV C

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 UV ERASABLE PROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 23 February 1993
Status: inactive
Page Count: 15
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1/ Circuit function Access time 01 2K × 8-bit UVEPROM 50 ns 02 2K × 8-bit UVEPROM 55 ns 03 2K × 8-bit UVEPROM 35 ns 04 2K × 8-bit UVEPROM 45 ns 05 2K × 8-bit UVEPROM 25 ns

The case outline(s) shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline Terminals Package style J GDIP1-T24 or CDIP2-T24 24 Dual-in-line K GDFP2-F24 or CDFP3-F24 24 Flat pack L GDIP3-T24 or CDIP4-T24 24 Dual-in-line 3 CQCCI-N28 28 Rectangular leadless chip carrier

The lead finish shall be as specified in MIL-M 38510 finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range (VCC) . . . . . . . . . . . . +4.5 V to +5.5 V Storage temperature range . . . . . . . . . . . . . −65°C to +150°C Voltages on any pin with respect to ground . . . . −0.6 V to +7.0 V VPP with respect to ground . . . . . . . . . . . . −0.6 V to +14.0 V Power dissipation (PD) . . . . . . . . . . . . . . 550 mW 3/ Lead temperature (soldering, 10 seconds) . . . . . +300°C Thermal resistance, junction-to-case (θJC) . . . . See MIL-STD-1835 Endurance . . . . . . . . . . . . . . . . . . . . . 50 cycles/byte, minimum Data retention . . . . . . . . . . . . . . . . . . 10 years, minimum

Case operating temperature range (TC) . . . . . . −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

March 23, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 UV ERASABLE PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
February 1, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K x 8 UV ERASABLE PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 1, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K x 8 UV ERASABLE PROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
December 16, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 UV ERASABLE PROM, MONOLITHIC SILICON
A description is not available for this item.
October 30, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 UV ERASABLE PROM, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-87650 REV C
February 23, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 UV ERASABLE PROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
December 24, 1991
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 UV ERASABLE PROM, MONOLITHIC SILICON
A description is not available for this item.
October 25, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 UV ERASABLE PROM, MONOLITHIC SILICON
A description is not available for this item.
January 4, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 8 UV ERASABLE PROM, MONOLITHIC SILICON
A description is not available for this item.

References

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