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ASTM F1239

Standard Test Methods for Oxygen Precipitation Characterization of Silicon Wafers by Measurement of Interstitial Oxygen Reduction

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Organization: ASTM
Publication Date: 1 January 1994
Status: inactive
Page Count: 5
ICS Code (Semiconducting materials): 29.045
scope:

1. Scope

1.1 These test methods cover complementary procedures for testing the oxygen precipitation characteristics of silicon wafers. It is assumed that the precipitation characteristics are related to the amount of interstitial oxygen lost during specified thermal cycles.

1.2 These test methods may be used to compare qualitatively the precipitation characteristics of two or more groups of wafers.

1.3 These test methods may be applied to any n- or p-type, any orientation Czochralski silicon wafers whose thickness, resistivity, and surface finish are such as to permit the oxygen concentration to be determined by infrared absorption and whose oxygen concentration is such as to produce measurable oxygen loss.

1.4 These test methods are not suitable for determining the width or characteristics of a "denuded zone," a region near the surface of a wafer that is essentially free of oxide precipitates.

1.5 Because these test methods are destructive, suitable sampling techniques must be employed.

1.6 The values stated in SI units are regarded as standard.

1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 8.

Document History

January 10, 2002
Standard Test Methods for Oxygen Precipitation Characterizations of Silicon Wafers by Measurement of Interstitial Oxygen Reduction
These test methods cover complementary procedures for testing the oxygen precipitation characteristics of silicon wafers. It is assumed that the precipitation characteristics are related to the...
ASTM F1239
January 1, 1994
Standard Test Methods for Oxygen Precipitation Characterization of Silicon Wafers by Measurement of Interstitial Oxygen Reduction
1. Scope 1.1 These test methods cover complementary procedures for testing the oxygen precipitation characteristics of silicon wafers. It is assumed that the precipitation characteristics are related...
August 25, 1989
STANDARD TEST METHODS FOR OXYGEN PRECIPITATION CHARACTERIZATION OF SILICON WAFERS BY MEASUREMENT OF INTERSTITIAL OXYGEN REDUCTION
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