ASTM F1239
STANDARD TEST METHODS FOR OXYGEN PRECIPITATION CHARACTERIZATION OF SILICON WAFERS BY MEASUREMENT OF INTERSTITIAL OXYGEN REDUCTION
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| Organization: | ASTM |
| Publication Date: | 25 August 1989 |
| Status: | inactive |
| Page Count: | 5 |
| ICS Code (Semiconducting materials): | 29.045 |
Document History
January 10, 2002
Standard Test Methods for Oxygen Precipitation Characterizations of Silicon Wafers by Measurement of Interstitial Oxygen Reduction
These test methods cover complementary procedures for testing the oxygen precipitation characteristics of silicon wafers. It is assumed that the precipitation characteristics are related to the...
January 1, 1994
Standard Test Methods for Oxygen Precipitation Characterization of Silicon Wafers by Measurement of Interstitial Oxygen Reduction
1. Scope 1.1 These test methods cover complementary procedures for testing the oxygen precipitation characteristics of silicon wafers. It is assumed that the precipitation characteristics are related...
ASTM F1239
August 25, 1989
STANDARD TEST METHODS FOR OXYGEN PRECIPITATION CHARACTERIZATION OF SILICON WAFERS BY MEASUREMENT OF INTERSTITIAL OXYGEN REDUCTION
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