DLA - MIL-S-19500/563D
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6845 AND 2N6847 JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
| Organization: | DLA |
| Publication Date: | 31 March 1995 |
| Status: | inactive |
| Page Count: | 19 |
scope:
This specification covers the detail requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-S-19500. Two levels of product assurance are provided for each unencapsulated device type.
See figure 1, TO-205AF (formerly TO-39) and 2. See figures 3 and 4 and 6.4 for JANHCA and JANKC die dimensions.
Unless otherwise specified, TA = +25°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: NASA/Parts Project Office (NPPO), NASA Goddard Space Flight Center, Code 311.A, Greenbelt, MD 20771-3917, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
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